"KMG"

Supplier: KMG

Hydrochloric Acid is a key ingredient to remove surface metallic ions by forming soluble metal chlorides.

Supplier: KMG

In semiconductor processing, the presence of metallic impurities on the wafer can lead to early dielectric breakdown. Hydrochloric acid is a key ingredient to remove surface metallic ions by forming soluble metal chlorides.

Storage: <80⁰ F

Supplier: KMG

Ammonium fluoride is used to dilute HF solutions for silicon dioxide film etching.

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Sulfuric acid is used in semiconductor processing to remove residual organic contamination prior to metalization steps.

Store at less than 109⁰ F

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IPA is used to rinse silicon wafers and to leave a clean dry residue free surface usually after organic stripping solutions

Supplier: KMG

Ammonium hydroxide is used in a SC-1 solution to remove organics and particles from the surface of a wafer. The ammonium hydroxide allows undercutting of the silicon dioxide freeing particles from the wafer by lift-off.

Storage: 0⁰ F - 80⁰F

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Hydrofluoric Acid 49% is used to soluabilize many oxides, particularly silicon dioxide, the most widely used insulator on semiconductor devices.

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N-Methylpyrrolidone (NMP) is a safer alternative to many hazardous solvents. NMP can be used remove cured photoresist, clean and dewax silicon wafers, and remove solder flux on printed circuit boards.

Supplier: KMG

Sulfuric Acid is used in semiconductor processing to remove residual organic contamination prior to metalization steps.
Store at less than 109⁰ F

Supplier: KMG

Nitric acid is a strong oxidizing agent. Nitric acid is used to oxidize silicon to silicon dioxide and to dissolve metals to metal nitrates. Nitric acid is used in combination with HF in mixed acid etchants to etch silicon.

Storage: <75⁰ F

Supplier: KMG

IPA is used to rinse silicon wafers and to leave a clean dry residue free surface usually after organic stripping solutions.

Supplier: KMG

can be used for drying laboratory glassware, removing greasy or oily contaminants from work benches, or as a general photoresist stripper or edgebead remover.

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Potassium hydroxide (KOH) is used to etch silicon. The crystalline orientation of the silicon greatly affects the etch rate making potassium hydroxide an anisotropic etchant.

Storage: 32⁰ F - 120⁰ F

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Acetone ≥99.5%, Cleanroom® LP for the electronics industry

Supplier: KMG

Hydrogen peroxide is used in SC-1 and SC-2 solutions to remove particles from silicon wafers and to remove surface metallic contamination. The purity of the hydrogen peroxide is critical to surface roughness and metallic residual levels on the wafer.

Supplier: KMG

Hydrogen peroxide is used in SC-1 and SC-2 solutions to remove particles from silicon wafers and to remove surface metallic contamination. The purity of the hydrogen peroxide is critical to surface roughness and metallic residual levels on the wafer.