Buffered oxide etch
Buffered oxide etch 10:1 (BOE 10:1) semiconductor grade
Supplier: Transene
Buffered Oxide Etchant 10:1 is a reduced-speed etchant for oxide films. 10:1 ratio of ammonium fluoride: HF.
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Buffered oxide etch 6:1 (BOE 6:1) semiconductor grade, with surfactant
Supplier: Transene
Buffered Oxide Etchant 6:1 with surfactant is a moderate-speed etchant for oxide films. 6:1 ratio of ammonium fluoride: HF. Contains non-PFAS surfactant to improve wet-out of high surface energy substrates or penetration of critical geometries.
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Buffered oxide etch 6:1 (BOE 6:1) semiconductor grade
Supplier: Transene
Buffered Oxide Etchant 6:1 is a moderate-speed etchant for oxide films. 6:1 ratio of ammonium fluoride: HF.
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Buffered oxide etch 50:1
Supplier: KMG
Buffered oxide etchants are used to etch thin films of silicon dioxide and shape contact and via openings.
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Buffered oxide etch 10:1 (BOE 10:1) semiconductor grade, with surfactant
Supplier: Transene
Buffered Oxide Etchant 10:1 with surfactant is a slower-speed etchant for oxide films. 10:1 ratio of ammonium fluoride: HF. Contains non-PFAS surfactant to improve wet-out of high surface energy substrates or penetration of critical geometries.
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