98 Results for: "KMG"

Supplier: KMG

Mixed acid etchant (MAE®) consists of volume ratios of nitric acid, hydrofluoric acid and acetic acid. Mixed acid etchants are widely used to etch silicon substrates and polysilicon films.

Supplier: KMG

Buffered oxide etchants are used to etch thin films of silicon dioxide and shape contact and via openings.

Supplier: KMG

Buffered oxide etchants are used to etch thin films of silicon dioxide and shape contact and via openings.

Supplier: KMG

IPA is used to rinse silicon wafers and to leave a clean dry residue free surface usually after organic stripping solutions.

Supplier: KMG

Dilute HF solutions transforms a hydrophilic silicon surface to a hydrophobic surface by terminating the silicon surface with hydrogen. Dilute HF can be used to eliminate a silicon dioxide dielectric layer or to remove a metal contaminated native oxide.

Supplier: KMG

Ammonium hydroxide is used in a SC-1 solution to remove organics and particles from the surface of a wafer. The ammonium hydroxide allows undercutting of the silicon dioxide freeing particles from the wafer by lift-off.

Storage: 0⁰ F - 80⁰F

Supplier: KMG

can be used for drying laboratory glassware, removing greasy or oily contaminants from work benches, or as a general photoresist stripper or edgebead remover.

Supplier: KMG

Methanol is a general cleaning solvent and is often a substitute for acetone due to its slower evaporation rate.

Supplier: KMG

Acetone can be used for drying laboratory glassware, removing greasy or oily contaminants from work benches, or as a general photoresist stripper or edgebead remover.

Supplier: KMG

Acetone ≥99.5%, Cleanroom® LP for the electronics industry

Supplier: KMG

Hydrogen peroxide is used in SC-1 and SC-2 solutions to remove particles from silicon wafers and to remove surface metallic contamination. The purity of the hydrogen peroxide is critical to surface roughness and metallic residual levels on the wafer.

Supplier: KMG

Dilute HF solutions transform a hydrophilic silicon surface to a hydrophobic surface by terminating the silicon surface with hydrogen. Dilute HF can be used to eliminate a silicon dioxide dielectric layer or to remove a metal contaminated native oxide.

Supplier: KMG

Hydrogen peroxide is used in SC-1 and SC-2 solutions to remove particles from silicon wafers and to remove surface metallic contamination. The purity of the hydrogen peroxide is critical to surface roughness and metallic residual levels on the wafer.

Supplier: KMG

Hydrogen peroxide is used in SC-1 and SC-2 solutions to remove particles from silicon wafers and to remove surface metallic contamination. The purity of the hydrogen peroxide is critical to surface roughness and metallic residual levels on the wafer.

Supplier: KMG

CR-16, is a nitric acid based chrome etchant used for photolithography masks, semiconductor and MEMS processes. It is designed to provide minimum undercutting, maximum critical dimension control and repeatability.

Supplier: KMG

Sulfuric acid is used in piranha solutions for organic removal.

Supplier: KMG

Aluminum Etchant is used to etch thin films of aluminum and its alloys

Supplier: KMG

Poly Etch Is a high purity acid blend used for controlled silicon etching.

Supplier: KMG

Residue oxide etch is a fluoride-based chemistry in an organic solvent. The fluoride species attacks and breaks down the residue to a form that allows the solvent to dissolve and remove the residue from the wafer surface.

Supplier: KMG

Wet chemical etching is an integral part of semiconductor manufacturing process. KMG’s line of ultra etchants (BOE w/surfactant) offers a variety of silicon dioxide etching rates and characteristics to meet your processing needs.

Supplier: KMG

Hydrogen peroxide is used in SC-1 and SC-2 solutions to remove particles from silicon wafers and to remove surface metallic contamination. The purity of the hydrogen peroxide is critical to surface roughness and metallic residual levels on the wafer.

Supplier: KMG

Phosphoric acid is primarily used in a boiling hot reflux application to strip nitride thin films from the front and back of silicon wafers.

Supplier: KMG

Dilute HF solutions transform a hydrophilic silicon surface to a hydrophobic surface by terminating the silicon surface with hydrogen. Dilute HF can be used to eliminate a silicon dioxide dielectric layer or to remove a metal contaminated native oxide.

Supplier: KMG

Buffered oxide etchants are used to etch thin films of silicon dioxide and shape contact and via openings.

Supplier: KMG

PGMEA is used as a solvent base for Photoresist and as an edge bead remover.

Supplier: KMG

Buffered oxide etchants are used to etch thin films of silicon dioxide and shape contact and via openings.

Supplier: KMG

Ethylene glycol is used as a coolant in equipment and as a diluent in etchants to lower etch rate, or as a corrosion inhibitor.

Supplier: KMG

Acetic acid is used to dilute silicon etching mixtures of nitric acid and hydrofluoric acid to modify etch rates.

Supplier: KMG

Wet chemical etching is an integral part of semiconductor manufacturing process. KMG’s line of ultra etchants (BOE w/surfactant) offers a variety of silicon dioxide etching rates and characteristics to meet your processing needs.

Supplier: KMG

Nitric acid is a strong oxidizing agent. Nitric acid is used to oxidize silicon to silicon dioxide and to dissolve metals to metal nitrates. Nitric acid is used in combination with HF in mixed acid etchants to etch silicon.