Buffered oxide etch 10:1 (BOE 10:1) semiconductor grade
- Item requires temperature control for storage and delivery with additional fees. It's not eligible for return due to safety and quality concerns. Consider requirements before purchasing.
- Return Policy
Product Details & Documents
Buffered Oxide Etchant 10:1 is a reduced-speed etchant for oxide films. 10:1 ratio of ammonium fluoride: HF.
- Boiling Pt:103…105 °C
- Melting Pt:–35 °C
- Density:1.11…1.12 g/cc
- UN:2817
- ADR:8, 6.1,II
Certificates
Search by Lot NumberSpecifications
Specification Test Results
- Color:≤ 10 APHA
- Aluminum:≤ 3.1 ppb
- Antimony:≤ 10 ppb
- Arsenic:≤ 2 ppb
- Barium:≤ 0.5 ppb
- Beryllium:≤ 1 ppb
- Bismuth:≤ 1 ppb
- Boron:≤ 5 ppb
- Cadmium:≤ 1 ppb
- Calcium:≤ 3 ppb
- Chloride:≤ 2 ppm
- Chromium:≤ 2 ppb
- Cobalt:≤ 2 ppb
- Copper:≤ 5 ppb
- Gallium:≤ 2 ppb
- Germanium:≤ 2 ppb
- Gold:≤ 2 ppb
- Iron:≤ 5 ppb
- Lead:≤ 2 ppb
- Lithium:≤ 1 ppb
- Magnesium:≤ 1 ppb
- Manganese:≤ 2 ppb
- Molybdeum:≤ 1 ppb
- Nickel:≤ 1 ppb
- Nitrate:≤ 3 ppm
- Phosphate:≤ 0.4 ppm
- Potassium:≤ 2 ppb
- Silver:≤ 1 ppb
- Sodium:≤ 5 ppb
- Strontium:≤ 1 ppb
- Sulfate:≤ 0.5 ppm
- Thallium:≤ 2 ppb
- Tin:≤ 2 ppb
- Titanium:≤ 5 ppb
- Vanadium:≤ 2 ppb
- Zinc:≤ 2 ppb
- Zirconium:≤ 2 ppb
- Particle >0.5:≤ 100 Particle/ml
- Particle >1.0:≤ 15 Particle/ml
Specifications
- Pack type:HDPE bottle
- Size:Gallon
Specifications
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